Schlagwort: 2022

Neuromorphic devices based on fluorite-structured ferroelectrics

Infomat
>10.1002/inf2.12380

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

ACS Applied Electronic Materials
>10.1021/acsaelm.2c01259

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3136981

The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2Capacitors

2022 International Electron Devices Meeting, IEDM 2022
>10.1109/IEDM45625.2022.10019554

Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers

Journal of Applied Physics
>10.1063/5.0119871

Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibility

2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)
>10.1109/NMDC46933.2022.10052145

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3129279

Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

Nature Communications
>10.1038/s41467-022-34533-w

A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation

IEEE Transactions on Nanotechnology
>10.1109/TNANO.2022.3221836

An Analog Memristive and Memcapacitive Device for Neuromorphic Computing

2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
>10.1109/ICECS202256217.2022.9970915

A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron

2022 | Conference paper | Author

2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
>10.1109/ICECS202256217.2022.9970799

END-TRUE: Emerging Nanotechnology-Based Double-Throughput True Random Number Generator

IFIP Advances in Information and Communication Technology ((IFIPAICT)
>10.1007/978-3-031-16818-5_9

Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions

ESSDERC 2022 – IEEE 52nd European Solid-State Device Research Conference
>10.1109/ESSDERC55479.2022.9947185

Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing

ESSCIRC 2022 – IEEE 48th European Solid State Circuits Conference
>10.1109/ESSCIRC55480.2022.9911392

Versatile experimental setup for FTJ characterization

Solid-State Electronics
>10.1016/j.sse.2022.108364

Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures

Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126788

Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)

2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)
>10.1109/FLEPS53764.2022.9781597

Challenges in Electron Beam Lithography of Silicon Nanostructures

2022 IEEE 22nd International Conference on Nanotechnology, NANO 2022
>10.1109/nano54668.2022.9928629

Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2

IEEE Electron Device Letters
>10.1109/LED.2022.3189159

Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films

ACS Applied Electronic Materials
>10.1021/acsaelm.2c00608

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126673

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
>10.1109/ISAF51494.2022.9870121

Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide

2022 Device Research Conference, DRC 2022
>10.1109/DRC55272.2022.9855802

Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VTDevices Fabrication for Hardware Security Applications

2022 Device Research Conference, DRC 2022
>10.1109/DRC55272.2022.9855805

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling

IEEE journal of the Electron Devices Society
>10.1109/JEDS.2022.3187101

Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays

6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
>10.1109/EDTM53872.2022.9797943

Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI

IEEE Transactions on Device and Materials Reliability
>10.1109/TDMR.2022.3183630

SPICE Compact Model for an Analog Switching Niobium Oxide Memristor

International Conference on Modern Circuits and Systems Technologies 2022
>10.1109/MOCAST54814.2022.9837726

A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices

2022 IEEE International Symposium on Circuits and Systems (ISCAS)
>10.1109/ISCAS48785.2022.9937555

Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2based ferroelectric capacitors on reliability performance

2022 IEEE International Memory Workshop (IMW)
>10.1109/IMW52921.2022.9779287

Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3171217

BEOL Integrated Ferroelectric HfO2based Capacitors for FeRAM

6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
>10.1109/EDTM53872.2022.9798048

Ferroelectric-based synapses and neurons for neuromorphic computing

Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4918

Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

IEEE Embedded Systems Letters
>10.1109/LES.2022.3144010

2022 roadmap on neuromorphic computing and engineering

Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4a83

Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films

Physica Status Solidi Rapid Research Letters
>10.1002/pssr.202100589