The first comprehensive book on ferroelectric HfO2 is now available including significant contributions from NaMLab.
Ferroelectricity in Doped Hafnium Oxide covers all aspects related to the structural and electrical properties of semiconductor devices, and the implementation of ferroelectric HfO2– and ZrO2-based thin films into these devices, including a comparison to standard ferroelectric materials. Ferroelectric and field-induced ferroelectric properties are considered promising for various applications, including non-volatile memories, ferroelectric field-effect-transistors, energy storage and harvesting, and solid-state cooling.
The book can be ordered through the following link (including preview Google books/Science Direct):
https://www.elsevier.com/books/ferroelectricity-in-doped-hafnium-oxide/schroeder/978-0-08-102430-0